Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

A comprehensive investigation on the hot-carrier-induced interface state generation and its impact carrier mobility in nMOSFET is performed. I- V compact modeling charge pumping (CP) characterization are used as independent ways to evaluate density a function of aging. From two techniques, similar power-law time exponents kinetics obtained. Assisted by quasi-spectroscopic (temperature-resolved) CP measurement, extracted further correlated with results: an universal degradation normalization parameter N it,ref = ~ 4.1 ×10 11 /cm xmlns:xlink="http://www.w3.org/1999/xlink">2 reported, irrespective effective oxide thickness (EOT), stress temperature, or relative device under test (DUT). Supported fundamental principles deployed derivation broad range experimental conditions considered for validation, reported could serve constant commonly models correlate induced hot stress.